| PART |
Description |
Maker |
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| AKD4561 AK4561VQ AK4561 |
16bit CODEC with built-in ALC and MIC/HP-Amp
|
AKM[Asahi Kasei Microsystems]
|
| AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V
Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM
Asahi Kasei Microsystems
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
| TB62701N E004109 |
16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| DTA143ZE DTA143ZKA DTA143ZSA DTA143ZUA A5800431 |
Digital Transistor(Built in Resistor)
From old datasheet system
Digital transistors (built-in resistors)
|
Rohm CO.,LTD.
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M52S32162A M52S32162A-10BG M52S32162A-10TG M52S321 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM41 |
2M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M12L32162A M12L32162A-7BG M12L32162A-7TG |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
